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Photoresponsive flash memories made from organic field-effect transistors (OFETs) that can be quickly erased using just light might find use in a host of applications, including flexible imaging circuits, infra-red sensing memories and multibit-storage memory cells. Researchers from Hanyang University in Seoul and Pohang University of Science & Technology (POSTECH) have now found that they can significantly improve the performance of these devices by making use of floating gates based on cadmium selenide (CdSe) quantum dots whose surfaces have been modified.

“OFET-type light-erasable memories have recently emerged as promising elements for information delivery,” explain Yong Jin Jeong and Jaeyoung Jang, who led this research effort. “The erasing process in this type of device is usually controlled using only light following a photo-induced recovery mechanism that works thanks to photo-induced charge transfer across the interface between a semiconductor and floating-gate layers in the device.”

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