Globally, computation is booming at an unprecedented rate, fueled by the boons of artificial intelligence. With this, the staggering energy demand of the world’s computing infrastructure has become a major concern, and the development of computing devices that are far more energy-efficient is a leading challenge for the scientific community.
Use of magnetic materials to build computing devices like memories and processors has emerged as a promising avenue for creating “beyond-CMOS” computers, which would use far less energy compared to traditional computers. Magnetization switching in magnets can be used in computation the same way that a transistor switches from open or closed to represent the 0s and 1s of binary code.
While much of the research along this direction has focused on using bulk magnetic materials, a new class of magnetic materials — called two-dimensional van der Waals magnets — provides superior properties that can improve the scalability and energy efficiency of magnetic devices to make them commercially viable.
Although the benefits of shifting to 2D magnetic materials are evident, their practical induction into computers has been hindered by some fundamental challenges. Until recently, 2D magnetic materials could operate only at very low temperatures, much like superconductors. So bringing their operating temperatures above room temperature has remained a primary goal. Additionally, for use in computers, it is important that they can be controlled electrically, without the need for magnetic fields. Bridging this fundamental gap, where 2D magnetic materials can be electrically switched above room temperature without any magnetic fields, could potentially catapult the translation of 2D magnets into the next generation of “green” computers.
A team of MIT researchers has now achieved this critical milestone by designing a “van der Waals atomically layered heterostructure” device where a 2D van der Waals magnet, iron gallium telluride, is interfaced with another 2D material, tungsten ditelluride. In an open-access paper published recently in Science Advances, the team shows that the magnet can be toggled between the 0 and 1 states simply by applying pulses of electrical current across their two-layer device.
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