With its promise of superfast computers and ultrapowerful optical microscopes among the many possibilities, plasmonics has become one of the hottest fields in high-technology. However, to date plasmonic properties have been limited to nanostructures that feature interfaces between noble metals and dielectrics. Now, researchers with the U.S. Department of Energy (DOE)’s Lawrence Berkeley National Laboratory (Berkeley Lab) have shown that plasmonic properties can also be achieved in the semiconductor nanocrystals known as quantum dots. This discovery should make the field of plasmonics even hotter.
“We have demonstrated well-defined localized surface plasmon resonances arising from p-type carriers in vacancy-doped semiconductor quantum dots that should allow for plasmonic sensing and manipulation of solid-state processes in single nanocrystals,” says Berkeley Lab director Paul Alivisatos, a nanochemistry authority who led this research. “Our doped semiconductor quantum dots also open up the possibility of strongly coupling photonic and electronic properties, with implications for light harvesting, nonlinear optics, and quantum information processing.”
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