Technique reveals quantum phase transition; could lead to superconducting transistors

Like atomic-level bricklayers, researchers from the U.S. Department of Energy's (DOE) Brookhaven National Laboratory are using a precise atom-by-atom layering technique to fabricate an ultrathin transistor-like field effect device to study the conditions that turn insulating materials into high-temperature superconductors. The technical break-through, which is described in the April 28, 2011, issue of Nature, is already leading to advances in understanding high-temperature superconductivity, and could also accelerate the development of resistance-free electronic devices.