Graphene-based transistor seen as candidate for post-CMOS technology

A new graphene-based transistor in which electrons travel both over a barrier and under it (by tunneling) has exhibited one of the highest performances of graphene-based transistors to date. The combination of the two types of transport enables the transistor to achieve a large difference between its on and off states, giving it a high on/off ratio, which has so far been difficult to achieve in graphene-based transistors. With this advantage, in addition to its ability to operate on transparent and flexible substrates, the new transistor could play a role in post-CMOS devices that are expected to be able to compute at much faster speeds than today's devices.