Memristors are a new class of electrical circuits—and they could end the silicon era and change electronics forever. Since HP first developed a working prototype with a titanium dioxide film in 2008, engineers have sought to perfect the model.
Now, researchers at Michigan Technological University have made an ideal memristor based on molybdenum disulfide nanosheets. Yun Hang Hu, the Charles and Carroll McArthur Professor of Materials Science and Engineering, led the research, which was published in Nano Letters this January.
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