A group of scientists from Moscow Institute of Physics and Technology and from the Moscow State University has developed a fundamentally new type of memory cell based on superconductors -- this type of memory will be able to work hundreds of times faster than the types of memory devices commonly used today, according to an article published in the journal Applied Physics Letters.
"With the operational function that we have proposed in these memory cells, there will be no need for time-consuming magnetization and demagnetization processes. This means that read and write operations will take only a few hundred picoseconds, depending on the materials and the geometry of the particular system, while conventional methods take hundreds or thousands of times longer than this," said the corresponding author of the study, Alexander Golubov, the Head of MIPT's Laboratory of Quantum Topological Phenomena in Superconducting Systems.
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