Two-dimensional electronic devices could inch closer to their ultimate promise of low power, high efficiency and mechanical flexibility with a processing technique developed at the Department of Energy's Oak Ridge National Laboratory.
A team led by Olga Ovchinnikova of ORNL's Center for Nanophase Materials Sciences Division used a helium ion microscope, an atomic-scale "sandblaster," on a layered ferroelectric surface of a bulk copper indium thiophosphate. The result, detailed in the journal ACS Applied Materials and Interfaces, is a surprising discovery of a material with tailored properties potentially useful for phones, photovoltaics, flexible electronics and screens.
"Our method opens pathways to direct-write and edit circuitry on 2-D material without the complicated current state-of-the-art multi-step lithographic processes," Ovchinnikova said.
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