With the advent of the Internet of Things (IoT) era, strong demand has grown for wearable and transparent displays that can be applied to various fields such as augmented reality (AR) and skin-like thin flexible devices. However, previous flexible transparent displays have posed real challenges to overcome, which are, among others, poor transparency and low electrical performance. To improve the transparency and performance, past research efforts have tried to use inorganic-based electronics, but the fundamental thermal instabilities of plastic substrates have hampered the high temperature process, an essential step necessary for the fabrication of high performance electronic devices.

As a solution to this problem, a research team led by Professors Keon Jae Lee and Sang-Hee Ko Park of the Department of Materials Science and Engineering at the Korea Advanced Institute of Science and Technology (KAIST) has developed ultrathin and transparent oxide thin-film transistors (TFT) for an active-matrix backplane of a by using the inorganic-based laser lift-off (ILLO) method. Professor Lee's team previously demonstrated the ILLO technology for energy-harvesting (Advanced Materials, February 12, 2014) and flexible memory (Advanced Materials, September 8, 2014) devices.

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