IBM scientists have achieved an important milestone toward creating sophisticated quantum devices that could become a key component of quantum computers. As detailed in the peer-review journal Nano Letters, the scientists have shot an electron through a III-V semiconductor nanowire integrated on silicon for the first time.
IBM scientists are driving multiple horizons in quantum computing, from the technology for the next decade based on superconducting qubits, towards novel quantum devices that could push the scaling limit of today's microwave technology down to the nanometer scale and that do not rely on superconducting components, opening a path towards room-temperature operation.
Now, IBM scientists in Zurich have made a crucial fundamental breakthrough in their paper Ballistic one-dimensional InAs nanowire cross-junction interconnects. Using their recently developed Template-Assisted-Selective-Epitaxy (TASE) technique to build ballistic cross-directional quantum communication links, they pioneered devices which can coherently link multiple functional nanowires for the reliable transfer of quantum information across nanowire networks. The nanowire acts as a perfect guide for the electrons, such that the full quantum information of the electron (energy, momentum, spin) can be transferred without losses.
Read more at: https://phys.org/news/2017-05-ibm-scientists-ballistic-nanowire-potential.html#jCp
IBM scientists have achieved an important milestone toward creating sophisticated quantum devices that could become a key component of quantum computers. As detailed in the peer-review journal Nano Letters, the scientists have shot an electron through a III-V semiconductor nanowire integrated on silicon for the first time.
IBM scientists are driving multiple horizons in quantum computing, from the technology for the next decade based on superconducting qubits, towards novel quantum devices that could push the scaling limit of today's microwave technology down to the nanometer scale and that do not rely on superconducting components, opening a path towards room-temperature operation.
Now, IBM scientists in Zurich have made a crucial fundamental breakthrough in their paper Ballistic one-dimensional InAs nanowire cross-junction interconnects. Using their recently developed Template-Assisted-Selective-Epitaxy (TASE) technique to build ballistic cross-directional quantum communication links, they pioneered devices which can coherently link multiple functional nanowires for the reliable transfer of quantum information across nanowire networks. The nanowire acts as a perfect guide for the electrons, such that the full quantum information of the electron (energy, momentum, spin) can be transferred without losses.