Flexible televisions, tablets and phones as well as 'truly wearable' smart tech are a step closer thanks to a nanoscale transistor created by researchers at The University of Manchester and Shandong University in China.
The international team has developed an ultrafast, nanoscale transistor -- known as a thin film transistor, or TFT, -- made out of an oxide semiconductor. The TFT is the first oxide-semiconductor based transistor that is capable of operating at a benchmark speed of 1 GHz. This could make the next generation electronic gadgets even faster, brighter and more flexible than ever before.
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