First-ever visualizations of electrical gating effects on electronic structure

Scientists have visualised the electronic structure in a microelectronic device for the first time, opening up opportunities for finely-tuned high performance electronic devices.

Physicists from the University of Warwick and the University of Washington have developed a technique to measure the energy and momentum of electrons in operating microelectronic devices made of atomically thin, so-called two-dimensional, materials.

Using this information, they can create visual representations of the electrical and optical properties of the materials to guide engineers in maximising their potential in electronic components.

The experimentally-led study is published in Nature today (17 July) and could also help pave the way for the two dimensional semiconductors that are likely to play a role in the next generation of electronics, in applications such as photovoltaics, mobile devices and quantum computers.

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