Researchers close in on new nonvolatile memory

Researchers from the Moscow Institute of Physics and Technology, along with their colleagues from Germany and the U.S., have achieved a breakthrough in nonvolatile memory devices. The team came up with a unique method for measuring the electric potential distribution across a ferroelectric capacitor, which could lead to the creation of memory orders of magnitude faster than current flash and solid-state drives, withstanding 1 million times as many rewrite cycles. The paper was published in Nanoscale.