Scientists at Tokyo Institute of Technology (Tokyo Tech) report a new material combination that sets the stage for magnetic random access memory based on spin, an intrinsic property of electrons. The innovation could outperform current storage devices. Their breakthrough, published in a new study, describes a novel strategy to exploit spin-related phenomena in topological materials and could spur several advances in the field of spin electronics. Moreover, this study provides additional insight into the underlying mechanism of spin-related phenomena.
Spintronics is a modern technological field where the spin, or the angular momentum, of electrons takes a primary role. In fact, collective spin arrangements are the reason for the curious properties of magnetic materials, which are popularly used in modern electronics. Researchers have been trying to manipulate spin-related properties in certain materials, especially for non-volatile memory. Magnetic non-volatile memory, (MRAM) has the potential to outperform current semiconductor memory technology in terms of power consumption and speed.
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