Scientists at Tokyo Institute of Technology(Tokyo Tech) explore a new material combination that sets the stage for magnetic random access memories, which rely on spin -- an intrinsic property of electrons -- and could outperform current storage devices. Their breakthrough published in a new study describes a novel strategy to exploit spin-related phenomena in topological materials, which could spur several advances in the field of spin electronics. Moreover, this study provides additional insight into the underlying mechanism of spin-related phenomena.
Spintronics is a modern technological field where the "spin" or the angular momentum of electrons takes a primary role in the functioning of electronic devices. In fact, collective spin arrangements are the reason for the curious properties of magnetic materials, which are popularly used in modern electronics. Researchers globally have been trying to manipulate spin-related properties in certain materials, owing to a myriad of applications in devices that work on this phenomenon, especially in non-volatile memories. These magnetic non-volatile memories, called MRAM, have the potential to outperform current semiconductor memories in terms of power consumption and speed.
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