Researchers at the National Physical Laboratory (NPL) have discovered that the conductivity at the edges of graphene devices is different to the central material.
The group used local scanning electrical techniques to examine the local nanoscale electronic properties of epitaxial graphene, in particular the differences between the edges and central parts of graphene Hall bar devices. The research was published in Scientific Reports, an open access publication from Nature Publishing Group.
The researchers found that the central part of the graphene channel demonstrated electron conduction (n-doped), whereas the edges demonstrated hole conduction (p-doped). They were also able to precisely tune the conduction along the edges of the graphene devices using side-gates, without affecting the conductive properties at the centre.
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