Magnetoresistance—a resistance induced by a magnetic field—is often associated with magnetic materials. Recent studies have identified a new effect called unidirectional magnetoresistance (UMR), which appears in nonmagnetic materials. The effect is characterized by an increase or decrease in the resistance, depending on the direction in which the current flows. A new experiment has discovered UMR in a surprising place—within the common semiconductor germanium. What’s more, the size of the effect is 100 times larger than in previous cases. The researchers propose a new theory of UMR to explain their results.

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