Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics developed a thickness-controlled black phosphorus tunnel field-effect transistor (TFET) that shows 10-times lower switching power consumption as well as 10,000-times lower standby power consumption than conventional complementary metal-oxide-semiconductor (CMOS) transistors.
The research team said they developed fast and low-power transistors that can replace conventional CMOS transistors. In particular, they solved problems that have degraded TFET operation speed and performance, paving the way to extend Moore's Law.
In the study featured in Nature Nanotechnology last month, Professor Cho's team reported a natural heterojunction TFET with spatially varying layer thickness in black phosphorus without interface problems. They achieved record-low average subthreshold swing values over 4-5 dec of current and record-high, on-state current, which allows the TFETs to operate as fast as conventional CMOS transistors with as much lower power consumption.
"We successfully developed the first transistor that achieved the essential criteria for fast, low-power switching. Our newly developed TFETs can replace CMOS transistors by solving a major issue regarding the performance degradation of TFETs,"Professor Cho said.
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