Step by step, scientists are figuring out new ways to extend Moore's Law. The latest reveals a path toward integrated circuits with two-dimensional transistors.
A Rice University scientist and his collaborators in Taiwan and China reported in Nature today that they have successfully grown atom-thick sheets of hexagonal boron nitride (hBN) as two-inch diameter crystals across a wafer.
Surprisingly, they achieved the long-sought goal of making perfectly ordered crystals of hBN, a wide band gap semiconductor, by taking advantage of disorder among the meandering steps on a copper substrate. The random steps keep the hBN in line.
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