A new RMIT-led study stacks two different types of 2D materials together to create a hybrid material providing enhanced properties.
This hybrid material possesses valuable properties towards use in future memory and electronic devices such as TVs, computers and phones. Most significantly, the electronic properties of the new stacked structure can be controlled without the need for external strain, opening the way for use in future low-energy transistors.
The result is a new potential material for multiferroic nanodevices, such as field-effect transistors and memory devices, which could operate using much less energy than current silicon-based electronics as well as making electronic components smaller.
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