Researchers at Kyushu University, the National Institute of Advanced Industrial Science and Technology (AIST) and Osaka University in Japan have recently introduced a new strategy for synthesizing multi-layer hexagonal boron nitride (hBN), a material that could be used to integrate different 2D materials in electronic devices, while preserving their unique properties. Their proposed approach, outlined in a paper published in Nature Electronics, could facilitate the fabrication of new highly performing graphene-based devices.
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