A proton-driven approach that enables multiple ferroelectric phase transitions sets the stage for ultralow power, high-capacity computer chips.
A proton-mediated approach that produces multiple phase transitions in ferroelectric materials could help develop high-performance memory devices, such as brain-inspired, or neuromorphic, computing chips, a KAUST-led international team has found. The paper is published in the journal Science Advances.
To read more, click here.