Graphene has been called "the wonder material of the 21st century." Since its discovery in 2004, the material—a single layer of carbon atoms—has been touted for its host of unique properties, which include ultra-high electrical conductivity and remarkable tensile strength. It has the potential to transform electronics, energy storage, sensors, biomedical devices, and more. But graphene has had a dirty little secret: it's dirty.
Now, engineers at Columbia University and colleagues at the University of Montreal and the National Institute of Standards and Technology are poised to clean things up with an oxygen-free chemical vapor deposition (OF-CVD) method that can create high-quality graphene samples at scale.
Their work, published May 29 in Nature, directly demonstrates how trace oxygen affects the growth rate of graphene and identifies the link between oxygen and graphene quality for the first time.
"We show that eliminating virtually all oxygen from the growth process is the key to achieving reproducible, high-quality CVD graphene synthesis," said senior author James Hone, Wang Fong-Jen Professor of Mechanical Engineering at Columbia Engineering. "This is a milestone towards large-scale production of graphene."
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