Chinese researchers have devised a new material that has the potential to create two-dimensional, low-power computer chips.
The team formed a stable, incredibly thin layer of aluminum oxide—just 1.25 nm thick—on the surface of single-crystalline aluminum at ambient temperature using a unique oxidation method.
This novel material, which offers low gate leakage, low interface state density, and high dielectric strength, satisfies the strict requirements established by the International Roadmap for Devices and Systems.
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