Resistive random access memory (ReRAM), which is based on oxide materials, is gaining attention as a next-generation memory and neuromorphic computing device. Its fast speeds, data retention ability, and simple structure make it a promising candidate to replace existing memory technologies.
KAIST researchers have now clarified the operating principle of this memory, which is expected to provide a key clue for the development of high-performance, high-reliability next-generation memory.
A research team led by Professor Seungbum Hong from the Department of Materials Science and Engineering, in collaboration with a research team led by Professor Sang-Hee Ko Park from the same department, has for the first time precisely clarified the operating principle of an oxide-based memory device, which is drawing attention as a core technology for next-generation semiconductors.
The work is published in the journal ACS Applied Materials & Interfaces.
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