Researchers from The University of Tokyo and RIKEN demonstrated a non-volatile switching element operating with 40-picosecond electrical pulses using the antiferromagnetic material Mn₃Sn.
The study showed that spin-orbit torque can enable ultra-fast switching with lower heat generation and improved durability compared to conventional approaches.
Researchers also demonstrated switching using a 60-picosecond photocurrent pulse, highlighting potential links between optical signals and non-volatile spintronic memory systems.
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