Graphene quantum dots for single electron transistors

Scientists from the Higher School of Economics, Manchester University, the Ulsan National Institute of Science & Technology and the Korea Institute of Science and Technology have developed a novel technology that combines the fabrication procedures of planar and vertical heterostructures in order to assemble graphene-based single-electron transistors of excellent quality.

This technology could considerably expand the scope of research on two-dimensional materials by introducing a broader platform for the investigation of various devices and physical phenomena. The manuscript is published as an article in Nature Communications.